Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths

Abstract

The resonant tunneling current is studied in AlAs/GaAs/AlAs double barrier heterostructures in which the barrier widths L B are precisely controlled to be exactly 5, 8 and 11 atomic monolayers. It is demonstrated for the first time that the density of resonant current in these diodes can be controlled from 5×10 2 Acm -2 to 1.2×10 4 Acm -2 by the choice of L B , in accordance with the theoretical calculations. Furthermore, I – V characteristics of these devices are shown to be excellent with peak-to-valley ratios of 2.3 at room temperature and 10 at 80 K, the highest values ever reported.