Applied Physics Letters · 1984 · 272 citations · 5 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsQuantum MechanicsSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave OscillatorsOscillatorsQuantum TunnelingQuantum Well DevicesQuantum WellsCurrent DensityNegative Resistance OscillatorsPower OutputResonant TunnelingResonant Tunneling DevicesTunneling CurrentTunneling In Quantum Well StructuresTunneling Phenomena
Oscillations have been observed for the first time from double barrier resonant tunneling structures. By eliminating impurities from the wells, we have been able to increase the tunneling current density by a factor of nearly 100. With the attendant increase in gain and improved impedance match to the resonant circuit, the devices oscillated readily in the negative resistance region. Oscillator output power of 5 μW and frequencies up to 18 GHz have been achieved with a dc to rf efficiency of 2.4% at temperatures as high as 200 K. It is shown that higher frequencies and higher powers can be expected.
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Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations
Resonant tunneling through quantum wells at frequencies up to 2.5 THz
T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald et al. · Applied Physics Letters · 1983 · 1.1K citations · Full text