Polycrystalline silicon thin-film transistors with two-step annealing process

Abstract

Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature furnace annealing and high-temperature rapid thermal annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step annealing material exhibit better measured characteristics than those obtained by using conventional furnace annealing.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>