Chinese Physics B · 2010 · 10 citations · 15 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsQuantum MechanicsSemiconductor MaterialsAb Initio MethodsElectronic Band StructureOptical Properties Of SemiconductorsQuantum DotsSemiconductor PhysicsWide Band Gap SemiconductorsElectronic Energy LevelsSemiconductor Quantum Dots
We present a systematic investigation of calculating quantum dots (QDs) energy levels using the finite element method in the frame of the eight-band k · p method. Numerical results including piezoelectricity, electron and hole levels, as well as wave functions are achieved. In the calculation of energy levels, we do observe spurious solutions (SSs) no matter Burt–Foreman or symmetrized Hamiltonians are used. Different theories are used to analyse the SSs, we find that the ellipticity theory can give a better explanation for the origin of SSs and symmetrized Hamiltonian is easier to lead to SSs. The energy levels simulated with the two Hamiltonians are compared to each other after eliminating SSs, different Hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of QD size.
15
Motion of Electrons and Holes in Perturbed Periodic Fields
J. M. Luttinger, W. Kohn · Physical Review · 1955 · 3.1K citations
InGaAs-GaAs quantum-dot lasers
D. Bimberg, N. Kirstaedter, N. N. Ledentsov et al. · IEEE Journal of Selected Topics in Quantum Electronics · 1997 · 570 citations
Dragan Panti · Microelectronics Journal · 1998 · 554 citations