IEEE Transactions on Nuclear Science · 2012 · 51 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsPower ElectronicsSemiconductor DevicesDevice ReliabilitySemiconductor ReliabilityPower Electronics DevicesSilicon Carbide Power Devices
Tolerance against single-event burnout (SEB) caused by terrestrial neutrons is one of the urgent issues in practical application of SiC power devices. This paper presents evaluation results of neutron-induced SEB in SiC power diodes and differences between SiC and Si devices from the SEB standpoint.
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Single event upset at ground level
E. Normand · IEEE Transactions on Nuclear Science · 1996 · 611 citations