Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methods

Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

D. V. Lang, J. David Cohen, J. P. Harbison · Physical review. B, Condensed matter · 1982 · 475 citations

Engineering, Materials Science, Physics +17

Density of the gap states in undoped and doped glow discharge a-Si:H

M. Vaněček, J. Kočka, J. Stuchlı́k et al. · Solar Energy Materials · 1983 · 368 citations

Natural Sciences, Materials Science, Physics +10

Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states

J. David Cohen, D. V. Lang · Physical review. B, Condensed matter · 1982 · 234 citations

Engineering, Materials Science, Physics +17

Drive-level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films

C. E. Michelson, A. V. Gelatos, J. David Cohen · Applied Physics Letters · 1985 · 179 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds

Z. Valy Vardeny, J. Tauc · Physical Review Letters · 1985 · 137 citations

Natural Sciences, Materials Science, Physics +17