Space charge conduction in presence of a gauss ian distribution of localized states

Abstract

Abstract In semiconductors, the d.c. conduction is strongly influenced by the trap distribution in the band gap. The authors, assuming a gaussian trap distribution, calculate the current-voltage characteristics in space-charge-limited conduction. This theoretical model, applied to amorphous selenium, shows that such a distribution exists in the band gap of this material and is defined by Some small experimental discrepancies at high fields are also explained.