Quarter micron low noise GaAs FET's

P. W. Chye, C. Huang

IEEE Electron Device Letters · 1982 · 36 citations · 2 references

Concepts

Abstract

New quarter-micron gate GaAs MESFET's fabricated with optical lithography have yielded the best noise figures ever reported for FET's at frequencies between 12 and 32 GHz.

References

2