InP Etching by HI/Xe Inductively Coupled Plasma for Photonic-Crystal Device Fabrication

Abstract

We investigated the inductively coupled plasma etching of InP-based materials for photonic-crystal (PC) device fabrication. By optimizing bias power and gas pressure, circular holes with a diameter of <0.2 µm, a depth of 2.0 µm and a maximum aspect ratio of 13 were formed with an e-beam resist mask. This technique was applied to the fabrication of PC-slab devices, and a single-point-defect PC laser was demonstrated at room temperature.