Applied Physics Letters · 1986 · 14 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAmorphous SemiconductorsDefects In Electronic MaterialsSemiconductor DefectsSemiconductor ReliabilitySilicon MaterialsStress-strain BehaviorAmorphous SiliconFilm StressHydrogenated Amorphous SiliconLight-induced DamageLight-induced DegradationRadiation-induced DefectsResidual Stress In Thin FilmsSilicon Defects
No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a ‘‘zero-stress’’ film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.
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Elastic Properties of ZnS Structure Semiconductors
Richard M. Martin · Physical review. B, Solid state · 1970 · 1.3K citations