Surface structure of GaAs(211)

Polar heterojunction interfaces

Walter A. Harrison, E. A. Kraut, J. R. Waldrop et al. · Physical review. B, Condensed matter · 1978 · 627 citations

Electrical Engineering, Polariton Dynamic, Engineering +14

Theoretical study of the atomic structure of silicon (211), (311), and (331) surfaces

D. J. Chadi · Physical review. B, Condensed matter · 1984 · 322 citations

Engineering, Vicinal Surfaces, Energetic Aspects +17

Semiconductor surface structures

A. Kahn · Surface Science Reports · 1983 · 256 citations

Semiconductors, Semiconductor Devices, Semiconductor Surface Structures +6

LEED studies of clean high Miller index surfaces of silicon

B.Z. Olshanetsky, V. I. Mashanov · Surface Science · 1981 · 161 citations

Materials Science, Surface Characterization, Engineering +8

Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructions

R. J. Meyer, C. B. Duke, A. Paton et al. · Physical review. B, Condensed matter · 1979 · 140 citations

Engineering, Electron Diffraction, Electronic Structure +16