Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/α-Al₂O₃

Abstract

We present the first results on (0001) ZnO/(0001) epi-GaN/(0001) α-Al2O3 heterostructure fabrication combining metal-organic vapour phase epitaxy and low-pressure chemical vapour deposition methods. The surface morphologies of the films were studied, and x-ray and reflection high-energy electron diffraction measurements were made, which showed a high degree of structural perfection of the ZnO films, with crystallite misorientation as low as 21'. The measured photoluminescence spectra of the films featured prevailingly emission within the excitonic region.