Applied Physics Letters · 1972 · 16 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSensorsAcoustic MeasurementAcoustic Sensing SystemsAcoustic SensorsPiezoelectric MaterialsStrain SensorsTransducer TechnologyAcoustic Wave MeasurementInsulated-gate Field-effect TransistorsPiezoelectric SensingPiezoelectric SensorsPiezoelectric Strain SensorsPiezoelectric Transducers
An oriented piezoelectric film has been incorporated in the insulator region of a silicon insulated-gate field-effect transistor to provide a sensitive high-frequency strain transducer. With this device, strains as low as 10−8 have been detected and gauge factors of roughly 7000 have been attained for applied ac strains at 5.6 MHz.
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