Pulsed Raman measurement of the onset of recrystallization in laser annealing

Abstract

We have made the first time-resolved measurement of the onset of recrystallization following pulsed laser irradiation of ion-implanted silicon. We find recrystallization to be nearly complete 25 nsec after a 7-nsec annealing pulse with focused energy density of 0.6 J/cm2.