Density of interface states, excess capacitance and series resistance in the metal–insulator–semiconductor (MIS) solar cells

The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

E. H. Nicollian, A. Goetzberger · Bell System Technical Journal · 1967 · 1.8K citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

Engineering, Charge Transport, Semiconductor Device +16

Metal-semiconductor contacts

M. Pepper · Physics in Technology · 1974 · 1.1K citations

Investigation of the double exponential in the current—Voltage characteristics of silicon solar cells

Martin Wolf, G. T. Noel, R. J. Stirn · IEEE Transactions on Electron Devices · 1977 · 256 citations

Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si

S. Kar, Walter E. Dahlke · Solid-State Electronics · 1972 · 238 citations

Materials Science, Oxide Heterostructures, Engineering +8