IEEE Transactions on Electron Devices · 1981 · 23 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice CharacterizationElectron TransportElectronic EffectsHigh-frequency Semiconductor DevicesSemiconductor PhysicsCarrier Transport At High FrequencyCarrier Transport MechanismsElectron Transport In SemiconductorsField-effect Transistor Transfer CharacteristicsPhenomenological Models
A comparison between the intrinsic frequency dependence of transferred electron effects in GaAs, InP, and GaInAs is presented. A simple, comparative, criterion is then derived on the basis of phenomenological Considerations.
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