Effect of Laser-Plasma X-Ray Irradiation on Crystallization of Amorphous Silicon Film by Excimer Laser Annealing

Abstract

The effect of laser plasma soft X-ray (LPX) irradiation on crystallization by excimer laser annealing (ELA) was investigated at low ELA energy densities. The crystalline fraction at energy densities of 50 and 60 mJ/cm2 for LPX followed by ELA is nearly equal to that at 80 to 100 mJ/cm2 for the ELA method with non-LPX irradiation. The results obtained indicate that LPX irradiation before ELA reduces the critical energy density for the start of crystallization. The combined method of LPX irradiation and ELA will enable us to realize a low-temperature process for ELA crystallization.