IEEE Transactions on Magnetics · 2002 · 39 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesMagnetic Recording MaterialsMemory DevicesBit Error RateContact ResistanceElectrical PropertiesLapping ProcessesMagnetic Recording MediaNoise AnalysisShot NoiseShot Noise Analysis
Tunnel giant magnetoresistance (TMR) heads at /spl sim/50 Gb/in/sup 2/ have been fabricated using improved lapping process. Together with writer of 2.0 T pole materials, recording performance has been demonstrated at magnetic write width of 0.28 /spl mu/m and magnetic read width of 0.18 /spl mu/m. The resistance area product of final wafer data is around 5 /spl Omega//spl middot//spl mu/m/sup 2/, with lead and contact resistance included, resulting in a final head resistance of around 200 /spl Omega/. The output voltage achieved for 1 mA bias current is 42 mV//spl mu/m, and the isolated pulses are stable. With a discrete preamplifier, the track density as measured by "747 curve" is 94 kTPI at a bit-error rate of 10/sup -4/ and the linear density is 508 kBPI, achieving an areal density of 48 Gb/in/sup 2/. The noise analysis reveals that the noises come mainly from media and shot noise.
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Large tunneling magnetoresistance enhancement by thermal anneal
R. C. Sousa, J. J. Sun, V. Soares et al. · Applied Physics Letters · 1998 · 188 citations
Natural Sciences, Electrical Engineering, Materials Science +13