AIP Advances · 2013 · 23 citations · 41 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsCurrent-voltage CharacteristicsDopingMemristive MaterialsSemiconductor Device MaterialsThin Film Electrical PropertiesThin-film MaterialsConductionCurrent-voltage RelationsCurrent-voltage RelationshipNonvolatile Memory MaterialsResistive SwitchingResistive Switching MaterialsSol-gel ProcessingSpace-charge-limited Current
The Ce and Mn co-doped BiFeO3 (BCFMO) thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80), long retention time (>105 s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices.
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Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart et al. · Nature · 2008 · 11.5K citations
Engineering, Electrical Engineering, Electronic Materials +5
Epitaxial BiFeO <sub>3</sub> Multiferroic Thin Film Heterostructures
Junling Wang, Jeffrey B. Neaton, Haimei Zheng et al. · Science · 2003 · 6.2K citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Resistive switching in transition metal oxides
Akihito Sawa · Materials Today · 2008 · 2.9K citations · Full text