Dinglin Xu - Concepedia

Author

Dinglin Xu

Xiangtan University

Also Known As

Ding-Lin Xu, Dinglin Xu

Publications

284

Citations

H-Index

Concepts

All Affiliations

Xiangtan University Chinese Academy of Sciences Institute of Microelectronics Tianjin University of Technology Universitat Autònoma de Barcelona

About

Dinglin Xu is an author at Xiangtan University specializing in engineering, electrical engineering, and nanoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	182
2	Electrical Engineering	4	4	140
3	Applied Physics	3	3	120
4	Computer Engineering	2	2	62
5	Chemical Engineering	1	1	42

Dinglin Xu

Publications

255

Citations

H-Index

Page 1

	Year	Citations
Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films Dinglin Xu, Ying Xiong, Minghua Tang, Journal of Alloys and Compounds Materials ScienceIi-vi SemiconductorElectrical EngineeringEngineeringUnipolar Resistive	2013	63
Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation Guo‐Ming Wang, Shibing Long, Zhaoan Yu, Applied Physics Letters Resistance UniformityElectrical EngineeringPulse Program OperationEngineeringSwitching Time	2015	46
Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory Baiwen Zeng, Dinglin Xu, Minghua Tang, Journal of Applied Physics Non-volatile MemoryEngineeringResistive Switching PerformancesZro2/tio2 Bilayer StructurePhase Change Memory	2014	42
Impact of program/erase operation on the performances of oxide-based resistive switching memory Guo‐Ming Wang, Shibing Long, Zhaoan Yu, Nanoscale Research Letters	2015	41
Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application Zhenhua Tang, Jia Zeng, Ying Xiong, AIP Advances	2013	21
A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured With the Width-Adjusting Pulse Operation Method Meiyun Zhang, Guo‐Ming Wang, Shibing Long, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringSet Switching TimeResistive Ram MeasuredEngineering	2015	16
Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices Dinglin Xu, Ying Xiong, Minghua Tang, Applied Physics A Materials ScienceElectrical EngineeringEngineeringNanoelectronicsOxide Electronics	2013	15
Network Pharmacology Analysis of the Mechanisms Underlying the Therapeutic Effects of Yangjing Zhongyu Tang on Thin Endometrium Lei Zhang, Honglin Li, Liang Zhang, Drug Design Development and Therapy	2023	11

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