Applied Physics Letters · 1985 · 38 citations · 13 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsPlasma PhysicsThin FilmsAmorphous MaterialsAmorphous SolidsElectron MicroscopySilicon MaterialsThin-film MaterialsTransmission Electron MicroscopyAmorphous SiliconAmorphous Thin FilmsFilm Growth MechanismsHydrogenated Amorphous SiliconMultilayer Film MaterialsPlasma DepositionSilicon Thin FilmsThin-film Growth Mechanisms
Transmission electron micrographs of a multilayer film consisting of 360 alternating layers of plasma deposited hydrogenated amorphous silicon and silicon nitride show that each 28-Å-thick layer is remarkably flat and uniform. Within the first 1000 Å near the glass substrate the regular growth of the layers is disturbed by instabilities which resemble dislocations in the layering. Electron microscopy of compositional layering may prove to be an important tool for studying the growth mechanism during plasma deposition.
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Amorphous Semiconductor Superlattices
B. Abeles, T. Tiedje · Physical Review Letters · 1983 · 455 citations
Properties of amorphous semiconducting multilayer films
J. Kakalios, H. Fritzsche, N. Ibaraki et al. · Journal of Non-Crystalline Solids · 1984 · 116 citations