On the impact of Ag doping on performance and reliability of GeS<inf>2</inf>-based Conductive Bridge Memories

Abstract

In this work, we study the impact of Ag doping on GeS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based CBRAM devices employing Ag as active electrode. Several devices with Ag doping varying between 10% and 24% are extensively analyzed. First, we assess switching voltages and time-to-set as a function of Ag concentration in the electrolyte layer. Subsequently, we evaluate data retention at different temperatures. The results show that a Ag doping increase in the GeS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> yields a strong improvement on data retention performance, increasing the 10-years data-ret temperature from 68°C for the 10% Ag doping to 100°C for the 24%, without any significant increase of the set voltage (50mV higher).