Spin polarization and electronic structure of ferromagnetic Mn₅Ge₃ epilayers

Abstract

Abstract Germanium‐based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si‐based electronics. High‐quality single phase Mn 5 Ge 3 (0001) films, grown by solid‐phase epitaxy on Ge(111) and GaAs(111), exhibit strong ferromagnetism up to the Curie temperature T C ∼ 296 K. Point Contact Andreev Reflection (PCAR) measurements on Mn 5 Ge 3 epilayers reveal a spin‐polarization P = 42 ± 5% for both substrates. We also calculate the spin polarization of bulk Mn 5 Ge 3 in the diffusive and ballistic regimes using density‐functional theory (DFT). The measured spin polarization exceeds the theoretical estimates of PDFT = 35 ± 5% and 10 ± 5% for the diffusive and ballistic limits, respectively. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)