Evidence for large monomolecular recombinationcontribution tothreshold current in 1.3 µm GaInNAs semiconductor lasers

Abstract

The spontaneous emission, L, through a window in the substrate electrode of 1.3 µm GaInNAs MQW lasers was studied as a function of current, I, and temperature, T. Close to room temperature, a characteristic temperature at threshold To(L) ≃ T was observed as expected for band-to-band recombination in ideal quantum well devices. However, To(Ith) ≃ T/3 indicating other processes occur. Analysis of the variation of L with I, reveals that monomolecular recombination contributes more than 50% to the total current at threshold and also that some Auger recombination may be present.