Review of Scientific Instruments · 1996 · 109 citations · 7 references
Natural SciencesMaterials SciencePhysicsInstrumentationSemiconductor DevicesSurface ScienceAtomic Force MicroscopyScanning Probe MicroscopySurface MicroscopyIon Implantation EffectsKelvin Probe Force MicroscopyMicroscale Force MeasurementPotential DifferencePotential MeasurementResonanceSurface Potential Measurement
A vacuum compatible Kelvin probe force microscopy (KPFM) is presented. Difficulties in operating KPFM in a vacuum were overcome by utilizing the direct cantilever resonance frequency detection in the tip height control whereas the indirect resonance frequency detection scheme was used in primordial KPFM. The potential measurement sensitivity was improved by 14 dB compared to that in air. It is due to the increased cantilever Q value and the reduction in the interference from the tip height detection signal because potential measurement is conducted using the cantilever’s second resonance while tip height control was conducted using the first resonance. A silicon wafer whose surface is partially doped with arsenic by ion implantation was observed, and surface potential difference at the junctions were clearly imaged.
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M. Nonnenmacher, M. O’Boyle, H. K. Wickramasinghe · Applied Physics Letters · 1991 · 2.3K citations
Natural Sciences, Materials Engineering, Materials Science +17
Semiconductor characterization by scanning force microscope surface photovoltage microscopy
Jonathan Weaver, H. K. Wickramasinghe · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 73 citations
Natural Sciences, Electrical Engineering, Materials Science +17