Auger recombination in low-band-gap <i>n</i>-type InGaAs

Abstract

We measured the recombination lifetime of degenerate n-InxGa1−xAs for three different compositions that correspond to x=0.53, 0.66, and 0.78 (band gaps of 0.74, 0.60, and 0.50 eV, respectively) over the doping range of 3×1018–5×1019 carriers/cm3. The Auger recombination rate increases slowly with decreasing band gap, and it matches the behavior predicted for phonon-assisted recombination.