Publication | Closed Access
Ku-band high efficiency high gain pseudomorphic HEMT
21
Citations
1
References
1991
Year
Wide-bandgap SemiconductorElectrical EngineeringDoubleheterojunction Pseudomorphic HemtGate LengthEngineeringRf SemiconductorNanoelectronicsElectronic EngineeringApplied PhysicsMicroelectronicsOptoelectronicsGate WidthSemiconductor DeviceElectronic Circuit
A 0.25μm gate length, 1600μm gate width, doubleheterojunction pseudomorphic HEMT with moderate output power and record power gain and efficiency is reported. At 15 GHz, output power is 575 mW with 12dB gain and 50% power-added efficiency.
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