Raman scattering study of the thermal oxidation of InP

Abstract

Reflection Raman scattering has been used to study thermally grown air-oxidized films on InP. Elemental red phosphorus is detected in films grown between 350 and 550 °C. At oxidation temperatures exceeding 550 °C, InPO4 is observed with some In2O3 also present as a minor film constituent.