Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks - Concepedia

Concepedia

Publication | Closed Access

Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks

48

Citations

17

References

2005

Year

M. Schmidt, Max C. Lemme, H. Kurz, T. Witters, T. Schram, K. Cherkaoui, Adi Negara, Paul K. Hurley

Microelectronic Engineering

Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilitySurface ScienceApplied PhysicsInterface Defect DensitiesSemiconductor Device Fabrication/Sio2/hfo2/tin Gate StacksMicroelectronicsSilicon On InsulatorSemiconductor Device

References

	Year	Citations

Page 1

Page 1