Physical Review Letters · 1989 · 114 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSurface ScienceElectronic Band StructureElectronic StructureScanning Probe MicroscopySemiconductor PhysicsSemiconductor SurfacesSurface PhysicsAdsorbate - Surface InteractionsAdsorption On SemiconductorsAtomic BondingBand GapElectronic Density Of StatesScanning Tunneling SpectroscopySurface Electronic StructureSurface States
Using the scanning tunneling microscope, Au adsorbates are found to bond to Ga atoms on the GaAs(110) surface. A characteristic spectrum of band-gap states is observed for the Au adsorbates. Both donor and acceptor states are seen, and they are identified with the first and second electron states of the Au-Ga bond, respectively.
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Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
W. E. Spicer, I. Lindau, Perry Skeath et al. · Physical Review Letters · 1980 · 725 citations
Atom-selective imaging of the GaAs(110) surface
R. M. Feenstra, Joseph A. Stroscio, J. Tersoff et al. · Physical Review Letters · 1987 · 613 citations