Applied Physics Express · 2009 · 36 citations · 20 references
EngineeringElectrical EngineeringMicroelectronicsOrganic ChemistrySemiconductor DevicesField-effect TransistorsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignOrganic Electronic MaterialsOrganic SemiconductorsShort-channel EffectsCapacitanceCutoff FrequencyHigh-speed OperationLow-speed OperationOrganic ElectronicsOrganic Field-effect TransistorsParasitic CapacitanceParasitic Capacitance Reduction
An organic transistor having a novel structure, step-edge vertical-channel organic field-effect transistor (SVC-OFET), with a short channel length has been fabricated by a low-cost self-alignment process. The short channel is formed in the vertical direction along the side wall of a step-edge structure. The SVC-OFET structure also has an advantage in reducing the parasitic capacitance between the gate and drain electrodes. A short channel and reduced capacitance are important properties for a high-speed operation. The cutoff frequency achieved was approximately 900 kHz, which is a very high value for organic transistors.
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Yong‐Young Noh, Ni Zhao, Mario Caironi et al. · Nature Nanotechnology · 2007 · 546 citations
Natural Sciences, Electrical Engineering, Materials Science +12
A new architecture for polymer transistors
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Fast polymer integrated circuits
W. Fix, A. Ullmann, J. Ficker et al. · Applied Physics Letters · 2002 · 202 citations · Full text