Photoenhanced metalorganic chemical vapor deposition of ZnSe films using diethylzinc and dimethylselenide

Abstract

ZnSe thin films have been grown on (100)-oriented GaAs and glass substrates by photoenhanced metalorganic chemical vapor deposition from diethylzinc and dimethylselenide with a low-pressure mercury lamp as a light source. Process temperatures have been varied between 500 and 200° C. Without irradiation of the ultraviolet (UV) light, the growth rate decreases rapidly below 400 °C, whereas with irradiation, the growth occurred in the whole temperature range investigated, and the enhancement of the growth rate was observed above 400 °C. Furthermore, the enhancement of the preferential orientation of ZnSe films grown on glass substrates by the UV irradiation was also observed.