Concepedia

Reduced threshold vertical-cavity surface-emittinglasers

D.B. Young, J.W. Scott, V. Malhotra, L.A. Coldren

Electronics Letters · 1994 · 21 citations · 5 references

Abstract

Etched-pillar vertical-cavity surface-emitting laser structures have been fabricated incorporating sidewall sulphide passivation to reduce the surface recombination velocity at the exposed quantum well edges. The passivated devices exhibit a 25% reduction in surface recombination velocity and a minimum 0.67 mA threshold current.

References

5

Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers

D.B. Young, J.W. Scott, Frank H. Peters et al. · IEEE Journal of Quantum Electronics · 1993 · 145 citations

Engineering, Electrical Engineering, Materials Science +17

Tunable extremely low threshold vertical-cavity laser diodes

T. Wipiejewski, K. Panzlaff, E. Zeeb et al. · IEEE Photonics Technology Letters · 1993 · 57 citations

Engineering, Electrical Engineering, Materials Science +17

GaAs vertical-cavity surface emitting lasers fabricated by reactive ion etching

Kent D. Choquette, G. Hasnain, Y.H. Wang et al. · IEEE Photonics Technology Letters · 1991 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Passivation of the InP surface using polysulfide and silicon nitride overlayer

V. Malhotra · Applied Physics Letters · 1993 · 34 citations

Engineering, Materials Engineering, Materials Science +17

Interface Recombination Reduction by (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-Passivation in Metalorganic Chemical Vapor Deposition Regrown GaAlAs/GaAs Buried Heterostructure Lasers and Estimation of Threshold Currents in Microcavity Surface Emitting Lasers

T. Tamanuki, Fumio Koyama, Kenichi Iga · Japanese Journal of Applied Physics · 1992 · 16 citations

Engineering, Materials Engineering, Materials Science +17