Gas-phase reactions of CF3 and CF2 with hydrogen atoms: Their significance in plasma processing

The design of plasma etchants

Daniel Flamm, Vincent M. Donnelly · Plasma Chemistry and Plasma Processing · 1981 · 310 citations

Natural Sciences, Electrical Engineering, Materials Science +12

Control of relative etch rates of SiO2 and Si in plasma etching

R. A. Heinecke · Solid-State Electronics · 1975 · 185 citations

Natural Sciences, Materials Engineering, Materials Science +14

Basic chemistry and mechanisms of plasma etching

Daniel Flamm, Vincent M. Donnelly, D. E. Ibbotson · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 167 citations

Natural Sciences, Materials Science, Physics +17

A kinetic study of the plasma-etching process. I. A model for the etching of Si and SiO2 in C<i>n</i>F<i>m</i>/H2 and C<i>n</i>F<i>m</i>/O2 plasmas

Mark J. Kushner · Journal of Applied Physics · 1982 · 125 citations

Natural Sciences, Materials Engineering, Materials Science +17

Kinetics of the reactions of trifluoromethyl radical with atomic oxygen(3P) and molecular oxygen at 295 K

K. R. Ryan, I. C. Plumb · The Journal of Physical Chemistry · 1982 · 83 citations

Natural Sciences, Chemistry, Physics +10