Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

Abstract

N-polar InxAl1-xN (0.02 < x < 0.65) films were grown and characterized by plasma-assisted molecular beam epitaxy (PAMBE). Indium incorporation in the films was characterized both as a function of the impinging In and Al flux and the growth temperature. In incorporation in the film was found to decrease with increasing growth temperature (Tgr) for Tgr > 560 °C. A smooth surface morphology was obtained for In0.18Al0.82N lattice-matched to GaN. Subsequently, N-polar In0.18Al0.82N was used as a charge-inducing barrier in a N-polar GaN HEMT structure and electrical characterizations including current–voltage (I–V) measurements were performed.