Gate recess engineering of pseudomorphic In _0.30 GaAs/GaAsHEMTs

Abstract

The authors report how the performance of 0.12 µm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching; and the gate position in the source drain gap, using electron beam lithography. pHEMTs with a transconductance of 600 mS/mm, off state breakdown voltages >2 V, fT of 120 GHz, fmax of 180 GHz and MAG of 13.5 dB at 60 GHz are reported.