Applied Physics Letters · 1992 · 36 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsInfrared DetectorsPhotodetectorsQuantum TunnelingQuantum WellsSemiconductor DetectorsSemiconductor PhysicsAbsorbance SpectroscopyDark CurrentQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well Infrared PhotodetectorsQuantum Well PhotodetectorsQuantum Well StructuresStrained Quantum Wells
A new step-bound-to-miniband (SBTM) transition multiquantum-well long-wavelength infrared photodetector (LWIP) using a lightly strained In0.07Ga0.93As quantum well and a short-period GaAs/Al0.4Ga0.6As superlattice barrier structure has been developed. The new structure created a potential ‘step’ in the superlattice barrier to block the undesirable electron tunneling current from the heavily doped ground state in the quantum well, which results in a significant reduction in the device dark current. The measured absorbance spectra and photocurrent are in good agreement with our theoretical predictions. The peak detectivity D* at λ=10.5 μm was found to be 2.1×1010 cm √Hz/W at Vb=5 V and T=63 K.
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Tunneling in a finite superlattice
Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.4K citations
High speed semiconductor devices
III-Vs Review · 1991 · 533 citations
Engineering, Computer Engineering, Electrical Engineering +12