Semiconductor Science and Technology · 2000 · 14 citations · 13 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationQuantum TunnelingSemiconductor DetectorsSemiconductor PhysicsTunnelingElectrical PropertiesMultibarrier SystemsPrecisionTunnel DiodesTunneling BarriersTunneling DiodesTunneling In SemiconductorsTunneling Phenomena
A new analysis of rare events in quantum tunnelling is applied to experimental data from semiconductor tunnelling devices. For single AlAs barriers in a proposed microwave detector diode, sub 0.1 nm precision must be achieved for both the average barrier thickness and the rms deviation of that thickness, if the specification of systems designers are to be met. In multibarrier tunnel systems the statistics of the thickest barrier determine the spread of electrical properties.
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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations
Engineering, Electrical Engineering, Electronic Materials +16