Surface-micromachined RF MEMs switches on GaAs substrates

Abstract

This paper reports on the development of a broadband, low insertion loss, ohmic-contact MEMs switch for microwave and millimeter-wave applications. The switch is surface-micromachined and electrostatically-actuated with electromechanical performance simulated with analytical and numerical models that compare well to experiment. The switch has an actuation voltage of 30 V, a response time of 20 μs, and mechanical strength to withstand 109 actuations. A 3D electromagnetics scattering model developed iteratively with the electromechanical modeling predicts RF performance demonstrated to be greater than 50 dB of isolation below 2 GHz and less than 0.2 dB of insertion loss from DC through 40 GHz. ©1999 John Wiley & Sons, Inc. Int J RF and Microwave CAE 9: 348–361, 1999.