Effects of buffer layers in epitaxial growth of SrTiO3 thin film on Si(100)

Abstract

SrTiO3 thin film has been formed on Si(100) substrates with various single buffer layers such as SrO, CeO2, CaF2, CoSi2 and a multibuffer layer, YSZ/Y2O3/YBa2Cu3O7 by ArF excimer laser ablation. The relation of lattice orientation of buffer layers with SrTiO3 layer has been elucidated. The orientation of SrTiO3 film is influenced not only by lattice matching but by crystal structure and chemical bonding of the buffer layers. As well, the multibuffer layer more effectively forms preferential c-axis oriented SrTiO3 film on Si(100), while CoSi2 buffer is more effective for improving the dielectric constant of SrTiO3 than other buffer layers.