Applied Physics Letters · 1997 · 23 citations · 10 references
EngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser MaterialSurface-emitting LasersHigh-power LasersLaser ControlSemiconductor LasersSemiconductor Diode LasersCompound SemiconductorOptical PumpingPhotonicsElectrical EngineeringHigh PowerLaser MaterialsLaser ClassificationPump SourcesApplied PhysicsHigh-energy LasersOptoelectronicsLaser Damage
High power, 0.81-μm-emitting, semiconductor diode lasers are used as pump sources for Nd:YAG solid-state lasers. Devices (1-mm-long) consisting of a InGaAsP/In0.5(Ga0.9Al0.1)0.5P/In0.5(Ga0.5Al0.5)0.5P laser structure provide a threshold-current density, Jth, of 290 A/cm2 and a relatively high threshold-current characteristic temperature, T0 (140 K). Uncoated diode lasers (1.2-mm-long) have a maximum continuous wave output power of 5 W (both facets) at 20 °C. The internal power density at catastrophic optical mirror damage (COMD), P̄COMD, is determined to be 9.1 MW/cm2; that is, 1.8 times that for GaAs-active layer, Al-free, uncoated devices. Coated, InGaAsP-active devices are expected to have P̄COMD=18 MW/cm2, more than twice the P̄COMD of AlGaAs-active, 0.81-μm-emitting devices with the same emitting aperture. Therefore, 0.81-μm-emitting, InGaAsP-active diode lasers should operate reliably at powers at least twice those of AlGaAs-based devices with the same contact-stripe geometry.
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High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
D. Z. Garbuzov, N.Y. Antonishkis, A. D. Bondarev et al. · IEEE Journal of Quantum Electronics · 1991 · 155 citations
D.Z. Garbuzov, J.H. Abeles, N. Morris et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1996 · 53 citations
High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers
J.K. Wade, L. J. Mawst, D. Botez et al. · Applied Physics Letters · 1997 · 26 citations · Full text