Applied Physics Letters · 2012 · 14 citations · 17 references
Materials ScienceEngineeringNanomaterialsNanotechnologyGrowth RateSurface ScienceApplied PhysicsNanowire Growth RateNanoscale ModelingGermaneneNanostructuringNanostructure SynthesisNanofabricationNanoscale ScienceGermanium Nanowire GrowthGermanium NanowiresSemiconductor Nanostructures
Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 °C and 510 °C. The resulting nanowire growth rate turns out to be highly dependent on the substrate temperature exhibiting the maximum at T = 430 °C. The temperature dependence of growth rate can be attributed to surface diffusion both along the substrate and nanowire sidewalls. Analyzing the diffusive material transport yields a diffusion length of 126 nm at a substrate temperature of 430 °C.
17
Silicon nanowires as efficient thermoelectric materials
Akram Boukai, Yuri L. Bunimovich, Jamil Tahir‐Kheli et al. · Nature · 2008 · 2.7K citations
Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy
Lukas Schubert, P. Werner, N. D. Zakharov et al. · Applied Physics Letters · 2004 · 314 citations