Electronics Letters · 2008 · 13 citations · 6 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsOptical SourcesQuantum Well DevicesQuantum WellsSemiconductor LasersDistributed Feedback LasersExternal Quantum EfficiencyQuantum Well GainQuantum Well Laser DiodesQuantum Well LasersSemiconductor Laser DiodesSingle-mode Semiconductor LasersSpontaneous Emission
Room-temperature continuous-wave operation of distributed feedback GaInNAs quantum well laser diodes on GaAs in the 1.5 µm wavelength range is demonstrated for the first time. Singlemode emission with a sidemode suppression ratio of more than 45 dB is obtained at 1486 nm with a threshold current of 44 mA and an external efficiency of 0.06 W/A.
6
GaInAsN/GaAs laser diodes operating at 1.52 µm
M. Fischer, M. Reinhardt, A. Forchel · Electronics Letters · 2000 · 153 citations
Low threshold InGaAsN/GaAs lasers beyond 1500nm
G. Jaschke, R. Averbeck, Lutz Geelhaar et al. · Journal of Crystal Growth · 2005 · 104 citations
GaInNAs for GaAs based lasers for the 1.3 to 1.5μm range
M. Fischer, D. Gollub, M. Reinhardt et al. · Journal of Crystal Growth · 2003 · 59 citations