Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2003 · 53 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationElectronic Material CharacterizationSurface RoughnessSurface Roughness EffectsLine Edge Roughness AnalysisLine RoughnessLine WidthLine-edge RoughnessMetal-oxide-semiconductor Field-effect Transistor ModelingRoughness MeasurementSemiconductor Device CharacterizationSurface Roughness Measurement
A guideline for evaluating LER and total procedure to estimate effects of measured LER on device performance were proposed. Spatial-frequency distributions of LER in various resist materials were investigated and general characteristics of spatial-frequency distribution of LER were obtained. Measurement parameters for accurate LER measurement can be calculated according to the guideline. Measured line-width distribution was used for predicting degradation and variation in MOS transistor performance using the 2D device simulation. Effect of long-period component of LER was clarified as well as short-period component.