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Characterization of line-edge roughness in resist patterns and estimations of its effect on device performance
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2003
Year
EngineeringMeasurementEducationLine-edge RoughnessInterconnect (Integrated Circuits)ResistorResist PatternsComputational ElectromagneticsInstrumentationDevice ModelingElectrical EngineeringBias Temperature InstabilityDevice PerformanceMos Transistor PerformanceDevice ReliabilityMicroelectronicsSpecific ResistanceVarious Resist MaterialsApplied PhysicsTotal Procedure
A guideline for evaluating LER and total procedure to estimate effects of measured LER on device performance were proposed. Spatial-frequency distributions of LER in various resist materials were investigated and general characteristics of spatial-frequency distribution of LER were obtained. Measurement parameters for accurate LER measurement can be calculated according to the guideline. Measured line-width distribution was used for predicting degradation and variation in MOS transistor performance using the 2D device simulation. Effect of long-period component of LER was clarified as well as short-period component.