Modeling of self-electro-optic-effect devices

Abstract

A detailed comparison is presented between a comprehensive theoretical model, which uses the linewidth as the only fitted parameter, and a consistent set of experimental data for (i) the electro-optical properties of quantum-well (QW) modulators and (ii) the input power versus output power characteristics of interband self-electro-optic-effect devices (SEEDs). The model, which is founded on basic principles, includes excitonic effects and employs the depletion approximation to relate the applied bias to the electric field and to phenomenologically approximate the internal quantum efficiency. It is shown that this model is able to emulate and predict the behavior of QW modulators and SEEDs very well.