Novel hybrid optically bistable switch: The quantum well self-electro-optic effect device

Abstract

We report a new type of optoelectronic device, a self-electro-optic effect device (SEED), which uses the same GaAs/GaAlAs multiple quantum well material simultaneously as an optical detector and modulator. Using a series resistor and constant voltage bias supply the SEED shows optical bistabilty (OB) of the recently discovered type which relies on increasing absorption and requires no mirrors. OB is seen at room temperature from ∼850–860 nm, at powers as low as 670 nW or switching times as short as 400 ns (limited only by power restrictions) with ∼1-nJ optical switching energy in a 600-μm-diam device. Total energies per unit area (∼18 fJ/μm2) are substantially lower than any previously reported for OB.

References

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	Year	Citations
Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures D. S. Chemla, David A. B. Miller, P. W. Smith, IEEE Journal of Quantum Electronics PhotonicsGaas/algaas Multiple QuantumEngineeringExcitonic Absorption SaturationPhysics	1984	755
Large room-temperature optical nonlinearity in GaAs/Ga1−<i>x</i> Al<i>x</i>As multiple quantum well structures David A. B. Miller, D. S. Chemla, D. J. Eilenberger, Applied Physics Letters Large NonlinearityQuantum PhotonicsEngineeringNonlinear OpticsOptoelectronic Devices	1982	401
High-speed optical modulation with GaAs/GaAlAs quantum wells in a <i>p</i>-<i>i</i>-<i>n</i> diode structure Thomas H. Wood, C.A. Burrus, David A. B. Miller, Applied Physics Letters Optical MaterialsEngineeringOptical ModulationOptoelectronic DevicesSemiconductors	1984	386
Band-Gap—Resonant Nonlinear Refraction in III-V Semiconductors David A. B. Miller, C. T. Seaton, M. E. Prise, Physical Review Letters SemiconductorsPhotonicsElectrical EngineeringIi-vi SemiconductorBand-gap—resonant Nonlinear Refraction	1981	278
On the Physical Limits of Digital Optical Switching and Logic Elements P. W. Smith Bell System Technical Journal Optical MaterialsBistable Optical DevicesEngineeringOptical ComputingOptical Properties	1982	166
Electroabsorption by Stark effect on room-temperature excitons in GaAs/GaAlAs multiple quantum well structures D. S. Chemla, T. C. Damen, David A. B. Miller, Applied Physics Letters Quantum PhotonicsEngineeringRoom-temperature ExcitonsOptical AbsorptionOptoelectronic Devices	1983	151
A bistable Fabry-Perot resonator P. W. Smith, E. H. Turner Applied Physics Letters EngineeringCavity QedOptical Memory ElementOptical AmplifierOptical Computing	1977	150
Transient response of hybrid bistable optical devices E. Garmire, John H. Marburger, Susan D. Allen, Applied Physics Letters Optical MaterialsEngineeringOptical Transmission SystemOptomechanical SystemOptomechanics	1979	109
Degenerate four-wave mixing in room-temperature GaAs/GaAlAs multiple quantum well structures David A. B. Miller, D. S. Chemla, D. J. Eilenberger, Applied Physics Letters PhotonicsQuantum ScienceQuantum PhotonicsEngineeringLaser Science	1983	105
Optical bistability due to increasing absorption David A. B. Miller, A. C. Gossard, W. Wiegmann Optics Letters Optical BistabilityOptical MaterialsEngineeringOptical Transmission SystemOptical Absorption	1984	100

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