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InP-based VCSELs with Buried Tunnel Junction for Optical Communication and Sensing in the 1.3-2.3 μm Wavelength Range
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2006
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Unknown Venue
PhotonicsElectrical EngineeringOptical MaterialsBuried Tunnel JunctionEngineeringOptical PropertiesApplied PhysicsRecent ProgressOptoelectronic DevicesOptical SwitchingOptical CommunicationInp-based VcselsPhotonic DeviceOptoelectronics
In this paper, we present recent progress on high-performance InP-based long-wavelength VCSELs such as 1.3 or 1.55 μm incorporating a buried tunnel junction (BTJ) for applications in optical communication and sensing
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