InP-based VCSELs with Buried Tunnel Junction for Optical Communication and Sensing in the 1.3-2.3 μm Wavelength Range

M. Ortsiefer, M. Grau, R. Shau, K. Windhorn, E. Rönneberg, G. Böhm, Werner Hofmann, O. Dier, M.-C. Amann

2006 · 10 citations · 3 references

Concepts

Abstract

In this paper, we present recent progress on high-performance InP-based long-wavelength VCSELs such as 1.3 or 1.55 μm incorporating a buried tunnel junction (BTJ) for applications in optical communication and sensing

References

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