Applied Physics Letters · 1977 · 56 citations · 7 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsInterface ScienceSemiconductor MaterialsOxide SemiconductorsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsSilicon MaterialsAmorphous Oxide SemiconductorsAmorphous OxidesCrystalline SiliconOxide Layer GrowthSilica-based MaterialsSilicon DioxideSilicon InterfacesSilicon Thin Films
Thin (200–300 Å) cross sections of Si/SiO2 have been examined by transmission electron microscopy at a resolution of better than 10 Å to search for crystalline Si protrusions into, or islands in, the thermally grown SiO2. Within the resolution obtained, no evidence was found for any phase separation within the amorphous oxide layer.
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Stoichiometry of thin silicon oxide layers on silicon
T. W. Sigmon, W. K. Chu, E. Lugujjo et al. · Applied Physics Letters · 1974 · 109 citations
Natural Sciences, Materials Engineering, Materials Science +15