Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAtomic Layer DepositionOxide SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsBuffer LayersCrystalline StructureElectrical PropertiesElectrical Properties AnalysisP-type Oxide SemiconductorsSemiconductor Oxide Thin FilmsX-ray Diffraction AnalysisZinc Oxides
Nonploar m-plane ZnO films were grown on p-Si (111) substrates by using atomic layer deposition. X-ray diffraction and high resolution tunneling electron microscopy measurements showed that the ZnO films were 〈101¯0〉 oriented, and the crystalline quality of ZnO films was improved with an Al2O3 buffer layer, which significantly enhances the photoluminescence and reduces the reverse leakage current of ZnO/Si heterojuction.
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Optically pumped lasing of ZnO at room temperature
Darren M. Bagnall, Y. F. Chen, Z. Q. Zhu et al. · Applied Physics Letters · 1997 · 2.2K citations
Complex and oriented ZnO nanostructures
James A. Voigt, Jun Liu, Bonnie Beth McKenzie et al. · Nature Materials · 2003 · 1.5K citations
Natural Sciences, Materials Engineering, Materials Science +12