A Facile, Low‐Cost, and Scalable Method of Selective Etching of Semiconducting Single‐Walled Carbon Nanotubes by a Gas Reaction

Abstract

A facile, scalable, and low-cost gas-treatment method for selectively etching semiconductor single-walled carbon nanotubes (SWNTs) is developed. Using SO3 gas as the etchant at a temperature of 400 °C, semiconductor SWNTs can be selectively and efficiently removed, and after this gas treatment samples enriched with metallic SWNTs can be obtained.